FGA25N120FTD
IGBT 1200V 50A 313W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA25N120FTD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current of 50 A, with a pulsed current capability of 75 A. Featuring a maximum power dissipation of 313 W, it is suitable for demanding power switching tasks. The FGA25N120FTD exhibits a low on-state voltage of 2V at 15V gate-emitter voltage and 25A collector current. Key switching characteristics include a turn-on delay (Td(on)) of 48ns and a turn-off delay (Td(off)) of 210ns at 25°C, with a switching energy of 340µJ (on) and 900µJ (off) under specified test conditions. The device operates across a temperature range of -55°C to 150°C (TJ) and is provided in a TO-3P-3, SC-65-3 package suitable for through-hole mounting. Its robust performance makes it valuable in industries such as industrial motor control and power supply units.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 770 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 48ns/210ns |
| Switching Energy | 340µJ (on), 900µJ (off) |
| Test Condition | 600V, 25A, 15Ohm, 15V |
| Gate Charge | 160 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 313 W |
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