FGA25N120ANTU
IGBT 1200V 40A 310W TO3PManufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi FGA25N120ANTU is a high-performance NPT Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 75A. With a maximum power dissipation of 310W, it is suited for applications requiring robust switching performance. Key parameters include a typical gate charge of 200 nC and switching energies of 4.8mJ (on) and 1mJ (off) under test conditions of 600V, 25A, 10 Ohm, and 15V. The on-state voltage drop (Vce(on)) is a maximum of 3.2V at 15V gate drive and 25A collector current. The FGA25N120ANTU is housed in a TO-3P package, facilitating through-hole mounting and operation across an extended temperature range of -55°C to 150°C. This component finds application in motor control, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | TO-3P |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 60ns/170ns |
| Switching Energy | 4.8mJ (on), 1mJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 310 W |
Request a Quote
Clients Also Buy
FGY4L160T120SWD
1200V 160A FS7 IGBT TP247-4L
NGTB30N120LWG
IGBT 1200V 30A TO247
FGH75N60UFTU
IGBT 600V 150A 452W TO247
