FGA25N120ANTDTU
IGBT NPT/TRENCH 1200V 50A TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA25N120ANTDTU is an NPT and Trench IGBT designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 50 A, with a pulsed current capability of 90 A. The FGA25N120ANTDTU offers a maximum power dissipation of 312 W and a low on-state voltage of 2.65 V at 15 V gate-emitter voltage and 50 A collector current.
Key parameters include a gate charge of 200 nC and switching times (Td(on/off)) of 50 ns and 190 ns respectively, tested at 600 V, 25 A, 10 Ohm, 15 V. The reverse recovery time (trr) is specified at 350 ns. With a switching energy of 4.1 mJ (on) and 960 µJ (off), this IGBT is suitable for demanding power switching applications. The FGA25N120ANTDTU is housed in a TO-3P-3, SC-65-3 (TO-3P) package, facilitating through-hole mounting. It operates within an extended temperature range of -55°C to 150°C (TJ). This component finds application in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 50A |
| Supplier Device Package | TO-3P |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | 50ns/190ns |
| Switching Energy | 4.1mJ (on), 960µJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 312 W |
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