FGA25N120ANTDTU-F109
IGBT 1200V 50A 312W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA25N120ANTDTU-F109 is a 1200V NPT and Trench IGBT with a continuous collector current of 50A. This device offers a high collector current capability of 90A pulsed and a maximum power dissipation of 312W. Key parameters include a gate charge of 200 nC, a switching energy of 4.1mJ (on) and 960µJ (off) at 600V, 25A, 10 Ohm, 15V, and a typical turn-on delay of 50ns. The on-state voltage (Vce(on)) is 2.65V at 15V gate-source voltage and 50A collector current. The TO-3P-3, SC-65-3 package is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This IGBT is commonly utilized in power factor correction and motor drive applications within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 15V, 50A |
| Supplier Device Package | TO-3P |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | 50ns/190ns |
| Switching Energy | 4.1mJ (on), 960µJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 312 W |
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