FGA25N120ANDTU
IGBT 1200V 40A 310W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA25N120ANDTU is an NPT Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 40A at 25°C, with a pulsed capability of 75A. It dissipates up to 310W and features a low on-state voltage of 3.2V at 15V gate-emitter voltage and 25A collector current. With a gate charge of 200nC, typical turn-on delay is 60ns and turn-off delay is 170ns, with a reverse recovery time of 350ns. The FGA25N120ANDTU is housed in a TO-3P package and is suitable for demanding applications in power supplies, industrial motor control, and renewable energy systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | TO-3P |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 60ns/170ns |
| Switching Energy | 4.8mJ (on), 1mJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 310 W |
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