FGA20N120FTDTU
IGBT 1200V 40A 298W TO3PNManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA20N120FTDTU is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 60 A. It offers a maximum power dissipation of 298 W and a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 20A collector current. The device exhibits a typical gate charge of 137 nC and a reverse recovery time of 447 ns, contributing to efficient switching performance. Operating across a temperature range of -55°C to 150°C (TJ), the FGA20N120FTDTU is housed in a TO-3P-3, SC-65-3 package suitable for through-hole mounting. This IGBT is commonly utilized in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 447 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 137 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 298 W |
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