FGA15S125P
IGBT TRENCH 1250V 30A TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA15S125P is a Trench Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1250V collector-emitter breakdown voltage and a continuous collector current rating of 30A, with a pulsed capability of 45A. The IGBT exhibits a maximum power dissipation of 136W and a Vce(on) of 2.72V at 15V gate-emitter voltage and 15A collector current. Key parameters include a gate charge of 129 nC and an operating temperature range of -55°C to 175°C (TJ). Supplied in a TO-3P package, the FGA15S125P is suitable for power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.72V @ 15V, 15A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 129 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1250 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 136 W |
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