AFGY120T65SPD-B4
IGBT FS3 120A 650V TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi AFGY120T65SPD-B4 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a maximum collector-emitter voltage of 650 V and a continuous collector current of 240 A, with a pulsed capability of 378 A. The device exhibits a low collector-emitter saturation voltage of 1.85 V at 15 V gate-emitter voltage and 120 A collector current. Key switching characteristics include a turn-on delay of 53 ns and turn-off delay of 102 ns at 25°C, with switching energies of 6.8 mJ (on) and 3.5 mJ (off). The gate charge is 243 nC. The AFGY120T65SPD-B4 is housed in a TO-247-3 package, suitable for through-hole mounting. Its robust design supports a maximum power dissipation of 882 W and operates within an extended temperature range of -55°C to 175°C. This IGBT is utilized in power conversion systems across various industries including industrial motor drives and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 123 ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 120A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 53ns/102ns |
| Switching Energy | 6.8mJ (on), 3.5mJ (off) |
| Test Condition | 400V, 120A, 5Ohm, 15V |
| Gate Charge | 243 nC |
| Current - Collector (Ic) (Max) | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 378 A |
| Power - Max | 882 W |
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