AFGHL40T120RLD
1200V/40A FSII IGBT LOW VCESAT TManufacturer: onsemi
Categories: Single IGBTs
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onsemi AFGHL40T120RLD, a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT), offers a 1200V collector-emitter breakdown voltage and a continuous collector current of 48A, with a pulsed capability up to 160A. This device features a low Vce(on) of 2.1V at 15V gate-emitter voltage and 40A collector current, optimized with a switching energy of 3.4mJ (on) and 1.2mJ (off) under test conditions of 600V, 40A, 5 Ohm, and 15V. The high power dissipation of 529W is supported by a TO-247-3 through-hole package. With a typical gate charge of 395nC and operating temperatures ranging from -55°C to 175°C, the AFGHL40T120RLD is suitable for applications in industrial power conversion, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 195 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 48ns/208ns |
| Switching Energy | 3.4mJ (on), 1.2mJ (off) |
| Test Condition | 600V, 40A, 5Ohm, 15V |
| Gate Charge | 395 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 529 W |
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