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AFGHL40T120RL

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AFGHL40T120RL

1200V/40A FSII IGBT LOW VCESAT (

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi AFGHL40T120RL is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1250V collector-emitter breakdown voltage and a continuous collector current rating of 48A, with a pulsed capability of 160A. The Vce(on) is specified at 2.1V maximum under test conditions of 15V gate-emitter voltage and 40A collector current. With a maximum power dissipation of 529W and a low Vce(sat), this device contributes to efficient power conversion. Gate charge is 395 nC. The AFGHL40T120RL is housed in a TO-247-3 package suitable for through-hole mounting. It is qualified to AEC-Q101 standards, indicating suitability for automotive applications, and operates across a wide temperature range from -55°C to 175°C. Switching characteristics include a turn-on delay of 48ns and a turn-off delay of 208ns at 25°C, with a reverse recovery time of 195ns.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)195 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
Supplier Device PackageTO-247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C48ns/208ns
Switching Energy3.4mJ (on), 1.2mJ (off)
Test Condition600V, 40A, 5Ohm, 15V
Gate Charge395 nC
GradeAutomotive
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)1250 V
Current - Collector Pulsed (Icm)160 A
Power - Max529 W
QualificationAEC-Q101

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