AFGHL40T120RHD
1200V/40A FSII IGBT TO247 AUTOMOManufacturer: onsemi
Categories: Single IGBTs
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The onsemi AFGHL40T120RHD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 48 A, with a pulsed capability of 160 A. Optimized for efficient switching, it exhibits a typical turn-on delay of 37 ns and turn-off delay of 150 ns at 25°C, with associated switching energies of 3.7 mJ (on) and 1.2 mJ (off) under the specified test conditions (600V, 40A, 5 Ohm, 15V). The on-state voltage drop (Vce(on)) is a maximum of 2.4 V at 15 V gate-emitter voltage and 40 A collector current. With a maximum power dissipation of 400 W and an operating temperature range of -55°C to 175°C, this IGBT is suitable for demanding power conversion systems. It is housed in a standard TO-247-3 package for through-hole mounting. This device is commonly utilized in industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 195 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/150ns |
| Switching Energy | 3.7mJ (on), 1.2mJ (off) |
| Test Condition | 600V, 40A, 5Ohm, 15V |
| Gate Charge | 277 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 400 W |
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