AFGHL40T120RH
1200V/40A FSII IGBT (NO FRD) TO2Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi AFGHL40T120RH is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1250V and a continuous collector current (Ic) of 48A, with a pulsed capability of 160A. The maximum power dissipation is 400W. Key electrical characteristics include a gate charge of 277 nC, a collector-emitter saturation voltage (Vce(on)) of 2.4V at 15V gate drive and 40A collector current, and switching times of 37ns turn-on and 150ns turn-off at 25°C. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-247-3 through-hole configuration, this IGBT meets AEC-Q101 qualification, making it suitable for automotive applications. The AFGHL40T120RH is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 195 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/150ns |
| Switching Energy | 3.7mJ (on), 1.2mJ (off) |
| Test Condition | 600V, 40A, 5Ohm, 15V |
| Gate Charge | 277 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 1250 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 400 W |
| Qualification | AEC-Q101 |
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