AFGHL25T120RLD
1200V/25A FSII IGBT LOW VCESAT TManufacturer: onsemi
Categories: Single IGBTs
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onsemi AFGHL25T120RLD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 48A, with a pulsed capability of 100A. Its low Vce(on) of 2V at 15V gate-emitter voltage and 25A collector current, coupled with a maximum power dissipation of 400W, ensures efficient operation. The AFGHL25T120RLD exhibits typical on-state delay (Td(on)) of 27.2ns and off-state delay (Td(off)) of 116ns at 25°C, with a switching energy of 1.94mJ (on) and 730µJ (off) under test conditions of 600V, 25A, 5 Ohm, 15V. The device operates across a wide temperature range of -55°C to 175°C. Packaged in a TO-247-3 through-hole configuration, this IGBT is suitable for use in industrial power conversion, motor control, and power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 159 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 27.2ns/116ns |
| Switching Energy | 1.94mJ (on), 730µJ (off) |
| Test Condition | 600V, 25A, 5Ohm, 15V |
| Gate Charge | 277 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 400 W |
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