AFGHL25T120RH
1200V/25A FSII IGBT (NO FRD) TO2Manufacturer: onsemi
Categories: Single IGBTs
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onsemi AFGHL25T120RH is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 48 A, with a pulsed current rating of 100 A. The device dissipates a maximum power of 261 W and features a low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 25 A collector current. Switching characteristics include a turn-on delay of 27 ns and turn-off delay of 118 ns at 25°C, with a switching energy of 1.94 mJ (on) and 770 µJ (off). The AFGHL25T120RH is constructed with a standard input type and mounted via a through-hole configuration in a TO-247-3 package. Rated for automotive applications with AEC-Q101 qualification, it operates within an extended temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 159 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 27ns/118ns |
| Switching Energy | 1.94mJ (on), 770µJ (off) |
| Test Condition | 600V, 25A, 5Ohm, 15V |
| Gate Charge | 189 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 261 W |
| Qualification | AEC-Q101 |
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