onsemi AFGH4L60T120RW-STD is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding automotive applications. This power semiconductor component offers a robust 1200V breakdown voltage and a continuous collector current rating of 6A, making it suitable for power switching in electric vehicle powertrains, onboard chargers, and auxiliary power systems. Its advanced trench field-stop technology ensures efficient switching characteristics and minimal power loss, contributing to overall system efficiency and thermal management. The device is supplied in bulk packaging, adhering to industry standards for high-volume integration into automotive electronic control units. Its reliability and performance attributes make it a key component for engineers developing next-generation electric mobility solutions.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet: