AFGB30T65RQDN
IGBT - 650V 30A -SHORT CIRCUIT RManufacturer: onsemi
Categories: Single IGBTs
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onsemi AFGB30T65RQDN is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding power switching applications. This surface-mount device, housed in a TO-263 (D2PAK) package, offers a robust 650V breakdown voltage and a continuous collector current rating of 30A. Its design emphasizes fast switching speeds and low on-state voltage drop, crucial for efficient power conversion. The AFGB30T65RQDN is engineered for applications requiring superior thermal performance and reliability, commonly found in industrial power supplies, motor drives, and renewable energy systems. Its short-circuit rating further enhances its suitability for robust system designs.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
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