WPH4003-1E
MOSFET N-CH 1700V 2.5A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi WPH4003-1E is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1700 V and a continuous Drain Current (Id) of 2.5 A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 10.5 Ohms at 1.5 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 48 nC at 10 V and Input Capacitance (Ciss) of 850 pF at 30 V. With a maximum junction temperature of 150°C, the WPH4003-1E is housed in a TO-3PF package, facilitating through-hole mounting. Power dissipation is rated at 3 W (Ta) and 55 W (Tc). Applications for this device are found in power supply, industrial, and automotive sectors demanding robust high-voltage switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 30 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
