WPB4002-1E
MOSFET N-CH 600V 23A TO3P-3LManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi WPB4002-1E is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 23A at 25°C. The Rds On (Max) is specified at 360mOhm at 11.5A and 10V gate drive. With a maximum power dissipation of 220W (Tc), it is suitable for thermal management in robust designs. The device is housed in a TO-3P-3L package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 84 nC at 10V and input capacitance (Ciss) of 2200 pF at 30V. This MOSFET is commonly utilized in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 220W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3P-3L |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 30 V |
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