WPB4002
MOSFET N-CH 600V 23A TO3PBManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi WPB4002 is an N-Channel Power MOSFET designed for demanding power applications. This component features a Drain to Source Voltage (Vdss) of 600 V and a continuous drain current capability of 23 A at 25°C. The Rds On is specified at a maximum of 360 mOhm at 11.5 A and 10 V gate drive. With a maximum junction temperature of 150°C, it offers substantial power dissipation, rated at 2.5 W (Ta) and 220 W (Tc). The TO-3PB package facilitates through-hole mounting. Key parameters include a typical input capacitance (Ciss) of 2200 pF at 30 V and a gate charge (Qg) of 84 nC at 10 V. This MOSFET is suitable for use in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 220W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 30 V |
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