WPB4001-1E
MOSFET N-CH 500V 26A TO3P-3LManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi WPB4001-1E is a high-voltage N-Channel MOSFET designed for demanding power applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 26A at 25°C. With a low on-resistance of 260mOhm at 13A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum junction temperature of 150°C and a substantial power dissipation capability of 2250W (Tc) or 2.5W (Ta). Key parameters include a gate charge (Qg) of 87 nC at 10V and input capacitance (Ciss) of 2250 pF at 30V. Supplied in a TO-3P-3L package for through-hole mounting, this MOSFET is suitable for use in power supplies, industrial motor control, and lighting solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 220W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3P-3L |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 30 V |
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