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VN2410LZL1G

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VN2410LZL1G

MOSFET N-CH 240V 200MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi VN2410LZL1G is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 240V and a continuous drain current (Id) of 200mA at 25°C with a power dissipation of 350mW (Tc). It offers a maximum on-resistance (Rds On) of 10 Ohms at 500mA drain current and 10V gate-source voltage. The device has an input capacitance (Ciss) of 125 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2V at 1mA. The maximum gate-source voltage is ±20V. The VN2410LZL1G is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. This MOSFET is commonly utilized in power supplies, lighting controls, and industrial automation. It is supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs10Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)240 V
Input Capacitance (Ciss) (Max) @ Vds125 pF @ 25 V

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