SVD5867NLT4G
MOSFET N-CH 60V 22A DPAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SVD5867NLT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 22A at 25°C (Tc). With a maximum on-resistance (Rds On) of 39mOhm at 11A and 10V Vgs, it offers efficient power switching. The device operates with drive voltages ranging from 4.5V to 10V and boasts a gate charge (Qg) of 15 nC maximum at 10V Vgs. Input capacitance (Ciss) is rated at 675 pF maximum at 25V Vds. The SVD5867NLT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating high-density board designs. Power dissipation is 3.3W (Ta) and 43W (Tc). This MOSFET is suitable for applications in automotive, industrial power, and consumer electronics. It is supplied in Tape & Reel (TR) packaging and operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
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