SVD14N03RT4G
MOSFET N-CH 25V 2.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SVD14N03RT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous drain current (Id) capability of 2.5 A at 25°C ambient. With a maximum Rds(on) of 95 mOhm at 5 A and 10 Vgs, it exhibits low conduction losses. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting, and operates across a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge (Qg) of 1.8 nC at 5 V and input capacitance (Ciss) of 115 pF at 20 V. Maximum power dissipation is rated at 1.04 W (Ta) and 20.8 W (Tc). This MOSFET is suitable for use in various industrial and consumer electronics sectors requiring reliable power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 20.8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 20 V |
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