The onsemi SVC6H890N is an N-Channel power MOSFET designed for demanding applications. Featuring an 80 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 620A at 25°C (Ta), this component is optimized for high-power switching. It exhibits a low on-resistance (Rds On) of 0.53mOhm at 50A and 10V gate-source voltage (Vgs). The device operates with a gate drive voltage of 10V, a maximum Vgs of ±20V, and a threshold voltage (Vgs(th)) of 3.7V at 1.4mA. Input capacitance (Ciss) is rated at 31000 pF at 48 V, and gate charge (Qg) is 485 nC at 10 V. This surface mount die, part of the Automotive AEC-Q101 series, is suitable for use in automotive systems and other high-performance power electronics where robust thermal management and high current handling are critical. The operating temperature range is -55°C to 175°C (TJ). It is supplied in tape and reel packaging.
Additional Information
Series: Automotive, AEC-Q101RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 620A (Ta) |
| Rds On (Max) @ Id, Vgs | 0.53mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.7V @ 1.4mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 485 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 31000 pF @ 48 V |
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