STMFS4935NT1G
STMFS4935NT1GManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi STMFS4935NT1G is an N-Channel MOSFET designed for demanding power applications. This component features a Drain to Source Voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 13 A at 25°C ambient and up to 93 A at 25°C case temperature. The low Rds(on) of 3.2 mOhm at 30 A and 10 V drive voltage, coupled with a maximum power dissipation of 930 mW (Ta) and 48 W (Tc), makes it suitable for efficient power switching. Key parameters include a gate charge (Qg) of 49.4 nC at 10 V and input capacitance (Ciss) of 4850 pF at 15 V. The device utilizes MOSFET technology and is housed in a compact 5-DFN (5x6) package, specifically the 8-PowerTDFN, 5 Leads configuration, for surface mounting. This MOSFET is commonly employed in automotive and industrial power management solutions. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 49.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 15 V |
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