STD5407NT4G
MOSFET N-CH 40V 7.6A/38A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi STD5407NT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-to-source voltage (Vdss) and supports continuous drain currents of 7.6A at 25°C ambient (Ta) and 38A at 25°C case (Tc). With a low on-resistance (Rds On) of 26mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a power dissipation capability of 2.9W (Ta) and 75W (Tc), making it suitable for power management in various industrial and automotive systems. Key parameters include a gate charge (Qg) of 20 nC maximum at 10V and input capacitance (Ciss) of 1000 pF maximum at 32V. It is housed in a surface-mount DPAK package (TO-252-3, DPAK) and supplied on tape and reel. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 32 V |
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