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STD5406NT4G-VF01

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STD5406NT4G-VF01

NFET DPAK 40V SPCL TR

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel MOSFET, part number STD5406NT4G-VF01, is a 40V device in a TO-252-3, DPAK package. This surface mount component offers a continuous drain current of 12.2A at ambient temperature and 70A at case temperature (25°C). Its low on-resistance of 10mOhm is achieved at 30A drain current and 10V gate-source voltage, with a 10V drive voltage. The STD5406NT4G-VF01 features a maximum power dissipation of 3W (Ta) and 100W (Tc). Designed for demanding applications, it operates across a wide temperature range from -55°C to +175°C. This MOSFET is qualified to AEC-Q101 standards, making it suitable for the automotive industry. Key electrical parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 2500 pF at 32V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.2A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 32 V
QualificationAEC-Q101

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