STD5406NT4G
MOSFET N-CH 40V 12.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi STD5406NT4G is an N-Channel MOSFET with a 40V drain-source breakdown voltage. This component offers a continuous drain current of 12.2A at 25°C ambient temperature and 70A at 25°C case temperature. The device features a low on-resistance of 10mOhm maximum at 30A and 10V Vgs, with a gate charge of 45 nC maximum at 10V. It has an input capacitance of 2500 pF maximum at 32V. The STD5406NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and supports a maximum power dissipation of 3W ambient and 100W case temperature. Operating temperature range is -55°C to 175°C. This component is utilized in industrial and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 32 V |
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