STD24N06LT4G
MOSFET N-CH 60V 24A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi STD24N06LT4G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 24A at 25°C (Tc), this component offers robust power handling. The low on-resistance (Rds On) of 45mOhm at 10A and 5V gate drive ensures efficient operation with minimal power loss. With a typical gate charge (Qg) of 32 nC at 5V and input capacitance (Ciss) of 1140 pF at 25V, it is suitable for various switching applications.
This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating automated assembly. The operating temperature range of -55°C to 175°C (TJ) makes it suitable for harsh environments. Power dissipation is rated at 1.36W (Ta) and 62.5W (Tj). The STD24N06LT4G is commonly found in power supply units, motor control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 25 V |