STD110N02RT4G-VF01
MOSFET N-CH 24V 32A/110A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi STD110N02RT4G-VF01 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 24V and offers a continuous drain current capability of 32A at 25°C ambient temperature, increasing to 110A when measured at the case temperature. With a low on-resistance of 4.6mOhm at 20A and 10V Vgs, it minimizes conduction losses. The gate drive voltage ranges from 4.5V to 10V for optimal Rds(on) performance. Key parameters include a maximum gate charge (Qg) of 28 nC at 4.5V and an input capacitance (Ciss) of 3440 pF at 20V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mounting. Rated for automotive applications and qualified to AEC-Q101 standards, it operates across a wide temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive power management systems and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.88W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
| Qualification | AEC-Q101 |
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