STD110N02RT4G
MOSFET N-CH 24V 32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi STD110N02RT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a 24V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 32A at 25°C ambient temperature. With a low on-resistance (Rds On) of 4.6 milliohms at 20A and 10V Vgs, it ensures efficient power delivery. The MOSFET offers a maximum power dissipation of 1.5W ambient or 110W case temperature. Key parameters include a gate charge (Qg) of 28 nC at 4.5V and input capacitance (Ciss) of 3440 pF at 20V. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and operates across a junction temperature range of -55°C to 175°C. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |