SSU1N60BTU-WS
MOSFET N-CH 600V 900MA IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SSU1N60BTU-WS is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 900mA at 25°C (Tc). With a maximum Rds(on) of 12 Ohms at 450mA and 10V, it offers low conduction losses. Key parameters include a gate charge (Qg) of 7.7 nC (max) at 10V and an input capacitance (Ciss) of 215 pF (max) at 25V. The MOSFET is housed in an IPAK (TO-251-3 Short Leads) package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). This component is utilized in power supply units, lighting controls, and general-purpose power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 450mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 25 V |
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