SSR1N60BTM
MOSFET N-CH 600V 900MA DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SSR1N60BTM is an N-Channel Power MOSFET designed for demanding applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 900mA at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 12 Ohms at 450mA and 10V gate-source voltage. The device utilizes MOSFET technology and is housed in a TO-252AA (DPAK) surface mount package, supplied on tape and reel. Key parameters include a maximum gate charge (Qg) of 7.7 nC at 10V and a maximum input capacitance (Ciss) of 215 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 28W (Tc). This component is suitable for use in power supply, lighting, and industrial control applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 450mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 25 V |
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