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SSN1N45BTA

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SSN1N45BTA

MOSFET N-CH 450V 500MA TO92-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SSN1N45BTA is an N-Channel MOSFET designed for general-purpose switching applications. This component offers a Drain to Source Voltage (Vdss) of 450 V and a continuous drain current (Id) of 500mA at 25°C (Tc). It features a low on-resistance (Rds On) of 4.25 Ohms maximum at 250mA and 10V gate-source voltage. The device has a maximum power dissipation of 900mW (Ta) and a typical gate charge (Qg) of 8.5 nC at 10V. Packaged in a standard TO-92-3 (TO-226-3) through-hole configuration, it is supplied in cut tape. This MOSFET operates across a temperature range of -55°C to 150°C (TJ) and is suitable for use in various industrial and consumer electronics applications requiring reliable power switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Rds On (Max) @ Id, Vgs4.25Ohm @ 250mA, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id3.7V @ 250µA
Supplier Device PackageTO-92-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±50V
Drain to Source Voltage (Vdss)450 V
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V

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