SSN1N45BBU
MOSFET N-CH 450V 500MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SSN1N45BBU is an N-Channel MOSFET designed for applications requiring high voltage switching. Featuring a drain-source voltage (Vdss) of 450V and a continuous drain current (Id) of 500mA at 25°C (Tc), this component offers a maximum on-resistance (Rds On) of 4.25 Ohms at 250mA and 10V Vgs. It boasts a typical gate charge (Qg) of 8.5 nC at 10V. The SSN1N45BBU is packaged in a standard TO-92-3 (TO-226-3) through-hole configuration, making it suitable for various circuit board designs. Its power dissipation is rated at 900mW (Ta). This MOSFET is utilized in industries such as consumer electronics and industrial automation where reliable high-voltage switching is essential.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±50V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
