SSM1N45BTF
MOSFET N-CH 450V 500MA SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SSM1N45BTF is a N-Channel Power MOSFET designed for efficient power switching applications. This component offers a drain-source voltage (Vdss) of 450V and a continuous drain current (Id) of up to 500mA at 25°C (Tc). Featuring a low on-resistance (Rds On) of 4.25 Ohm maximum at 250mA and 10V gate-source voltage, it minimizes conduction losses. The gate charge (Qg) is specified at 8.5 nC maximum at 10V, and input capacitance (Ciss) is 240 pF maximum at 25V, facilitating effective switching performance.
This MOSFET is packaged in a SOT-223-4 (TO-261-4, TO-261AA) surface-mount configuration, suitable for automated assembly. The maximum power dissipation is 900mW (Ta). Operating across a temperature range of -55°C to 150°C, the SSM1N45BTF is utilized in various industries including industrial automation, consumer electronics, and power supply designs requiring high voltage capability and moderate current handling. The device supports a gate-source voltage (Vgs) up to ±50V and has a threshold voltage (Vgs(th)) of 3.7V maximum at 250µA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±50V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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