Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

SSH70N10A

Banner
productimage

SSH70N10A

MOSFET N-CH 100V 70A TO3PN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SSH70N10A is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 70A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), it is suitable for applications requiring robust thermal management. The Rds On (Max) is specified at 23mOhm at 35A and 10V gate drive. Key parameters include a gate charge (Qg) of 195 nC at 10V and input capacitance (Ciss) of 4870 pF at 25V. The device operates reliably across a wide temperature range from -55°C to 175°C (TJ) and comes in a TO-3PN package. This MOSFET is commonly employed in power conversion, motor control, and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3PN
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4870 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SMP3003-DL-1EX

MOSFET P-CH 75V 100A SMP-FD

product image
FDMC86324

MOSFET N-CH 80V 7A/20A POWER33

product image
NVTFS6H854NTAG

MOSFET N-CH 80V 9.5A/44A 8WDFN