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SMP3003-TL-1E

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SMP3003-TL-1E

MOSFET P-CH 75V 100A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SMP3003-TL-1E is a P-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 75V and a continuous drain current (Id) capability of 100A at 25°C (Ta), this component offers robust performance. Its low on-resistance (Rds On) of 8mOhm at 50A and 10V (Vgs) ensures efficient power transfer. The MOSFET is housed in a TO-263 (D2PAK) surface mount package, facilitating streamlined PCB assembly. With a maximum power dissipation of 90W (Tc), it is suitable for high-power switching and motor control applications across various industrial sectors. The device supports a gate drive voltage range of 4V to 10V and has a maximum junction temperature of 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 13400pF at 20V and a gate charge (Qg) of 280nC at 10V. This component is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Rds On (Max) @ Id, Vgs8mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)90W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13400 pF @ 20 V

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