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SI9424DY

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SI9424DY

MOSFET P-CH 20V 8A 8SOIC

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SI9424DY is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) capability of 8A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance, specified at 24mOhm maximum at 8A and 4.5V Vgs, is achieved with a drive voltage range of 2.5V to 4.5V. The SI9424DY is housed in a standard 8-SOIC package, suitable for surface mounting. Key electrical parameters include a typical Gate Charge (Qg) of 33nC at 5V Vgs and an Input Capacitance (Ciss) of 2260pF at 10V Vds. This component is utilized across various industries including automotive, industrial, and consumer electronics for power management, load switching, and battery control. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 8A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2260 pF @ 10 V

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