SI3442DV
MOSFET N-CH 20V 4.1A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SI3442DV is an N-Channel 20V MOSFET designed for surface-mount applications. This device offers a continuous drain current of 4.1A at 25°C with a maximum power dissipation of 1.6W (Ta). Key electrical characteristics include a low on-resistance of 60mOhm at 4.1A and 4.5V Vgs, and a gate charge of 14 nC at 4.5V. The input capacitance (Ciss) is specified at a maximum of 365 pF at 10V Vds. Featuring a SuperSOT™-6 package, this component is suitable for operation across a wide temperature range of -55°C to 150°C. The SI3442DV finds application in power management solutions across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | 8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 10 V |
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