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SFW9640TM

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SFW9640TM

MOSFET P-CH 200V 11A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SFW9640TM is a P-Channel MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 11A at 25°C (Tc). Its low on-resistance (Rds On) of 500mOhm is achieved at 5.5A and 10V gate drive voltage. The SFW9640TM boasts a maximum power dissipation of 123W at 25°C (Tc) and 3.1W at 25°C (Ta). Key electrical characteristics include a gate charge (Qg) of 59 nC at 10V and an input capacitance (Ciss) of 1585 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a TO-263-3, D2PAK surface mount package, delivered on tape and reel. This MOSFET is suitable for use in power supply, motor control, and industrial automation systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 123W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1585 pF @ 25 V

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