SFT1458-TL-H
MOSFET N-CH 600V 1A DPAK/TP-FAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SFT1458-TL-H is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 1A at 25°C ambient. The N-Channel MOSFET utilizes advanced MOSFET technology, offering a maximum Rds(On) of 13 Ohms at 500mA and 10V gate drive. The SFT1458-TL-H is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, commonly referred to as DPAK/TP-FA. It supports a maximum junction temperature of 150°C and has a power dissipation capability of 1W (Ta) to 38W (Tc). Key electrical parameters include a gate charge (Qg) of 3.8 nC at 10V and input capacitance (Ciss) of 65 pF at 20V. This device is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 13Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | DPAK/TP-FA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF @ 20 V |