SFT1458-H
MOSFET N-CH 600V 1A IPAK/TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SFT1458-H is an N-Channel MOSFET designed for power switching applications. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 1 A at 25°C ambient temperature. With an Rds On maximum of 13 Ohms at 500 mA and 10 V, it offers efficient conduction. The device is housed in a TO-251-3 Short Leads, IPAK/TP package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 3.8 nC at 10 V and input capacitance (Ciss) of 65 pF at 20 V. Power dissipation is rated at 1W (Ta) and 38W (Tc). This component finds utility in industries such as industrial power supplies and lighting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 13Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF @ 20 V |
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