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SFT1452-W

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SFT1452-W

MOSFET N-CH 250V 3A IPAK/TP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SFT1452-W is an N-Channel MOSFET designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 3 A at 25°C. The Rds On is specified at a maximum of 2.4 Ohms when driven at 10V with an Id of 1.5A. With a Gate Charge (Qg) of 4.2 nC (max) at 10V and Input Capacitance (Ciss) of 210 pF (max) at 20V, it offers efficient switching characteristics. The device supports a maximum Gate-to-Source Voltage (Vgs) of ±30V and a Gate Threshold Voltage (Vgs(th)) of 4.5V (max) at 1mA. It is packaged in a TO-251-3 Short Leads, IPAK, TO-251AA (TO-251/IPAK) package for through-hole mounting. The power dissipation is rated at 1W (Ta) and 26W (Tc), with an operating junction temperature of 150°C. This MOSFET is suitable for use in power supply, motor control, and industrial automation systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs2.4Ohm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id4.5V @ 1mA
Supplier Device PackageIPAK/TP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 20 V

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