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SFT1443-TL-H

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SFT1443-TL-H

MOSFET N-CH 100V 9A DPAK/TP-FA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SFT1443-TL-H is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 9A at 25°C. With a low on-resistance of 225mOhm maximum at 3A and 10V, it ensures efficient power transfer. The device supports a gate drive range from 4V to 10V, with a maximum gate-source voltage of ±20V. Key electrical parameters include a maximum gate charge (Qg) of 9.8 nC at 10V and input capacitance (Ciss) of 490 pF at 20V. The SFT1443-TL-H offers a maximum junction temperature of 150°C and can dissipate up to 1W (Ta) or 19W (Tc). Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, it is supplied on tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs225mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device PackageDPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 20 V

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