SFT1440-E
MOSFET N-CH 600V 1.5A TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SFT1440-E is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 1.5 A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 8.1 Ohms maximum at 800 mA and 10 V gate-source voltage. With a maximum junction temperature of 150°C, it provides a power dissipation of 1W (Ta) or 20W (Tc). Key parameters include a gate charge (Qg) of 6.3 nC maximum at 10 V and input capacitance (Ciss) of 130 pF maximum at 30 V. The SFT1440-E is housed in a TO-251-3 Short Leads, IPAK, or TO-251AA package, facilitating through-hole mounting. Applications include power supplies, motor control, and lighting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.1Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 30 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
