SFT1431-W
MOSFET N-CH 35V 11A IPAK/TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SFT1431-W is a through-hole N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 35V and supports a continuous drain current (Id) of 11A at 25°C (Ta). Optimized for performance, it exhibits a maximum Rds(on) of 25mOhm at 5.5A and 10V Vgs. The device operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.6V at 1mA. Key electrical characteristics include an input capacitance (Ciss) of 960pF at 20V and a gate charge (Qg) of 17.3nC at 10V. Power dissipation is rated at 1W (Ta) and 15W (Tc). The SFT1431-W is housed in an IPAK/TP (TO-251-3 Short Leads, IPAK, TO-251AA) package, suitable for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 20 V |
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