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SFT1431-TL-W

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SFT1431-TL-W

MOSFET N-CH 35V 11A DPAK/TP-FA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SFT1431-TL-W is an N-Channel MOSFET designed for demanding power applications. This device offers a 35V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C ambient temperature. Featuring a low on-resistance of 25mOhm maximum at 5.5A and 10V Vgs, it minimizes conduction losses. The MOSFET's 17.3 nC (max) gate charge and 960 pF (max) input capacitance are critical parameters for efficient switching. It supports drive voltages from 4V to 10V and has a maximum gate-source voltage rating of ±20V. The SFT1431-TL-W is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for high-density board designs. With a maximum junction temperature of 150°C, it dissipates up to 1W (Ta) or 15W (Tc). This component finds application in various industrial sectors including automotive and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs25mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device PackageDPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)35 V
Gate Charge (Qg) (Max) @ Vgs17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 20 V

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