SFT1423-E
MOSFET N-CH 500V 2A TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SFT1423-E is an N-Channel Power MOSFET designed for applications requiring high voltage and moderate current. Featuring a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current of 2A at 25°C, this component is suitable for power switching and control in industrial and automotive sectors. The device offers a maximum on-resistance (Rds On) of 4.9 Ohms at 1A and 10V Vgs. Its IPAK/TP package with through-hole mounting facilitates integration into existing circuit designs. The operating junction temperature reaches 150°C with a maximum power dissipation of 1W (Ta) and 20W (Tc). Key parameters include a gate charge of 8.7 nC and input capacitance of 175 pF.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.9Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 30 V |