SFT1350-TL-H
MOSFET P-CH 40V 19A TP-FAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel MOSFET, part number SFT1350-TL-H, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 19A at 25°C ambient. This device features a low on-resistance of 59mOhm maximum at 9.5A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. The SFT1350-TL-H is packaged in a TO-252-3 (DPAK) surface-mount configuration and supports a maximum junction temperature of 150°C. Power dissipation is rated at 1W (Ta) and 23W (Tc). Key parameters include a maximum gate charge of 12nC and input capacitance of 590pF. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 23W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TP-FA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 20 V |
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